| 发明名称 |
ATOMIC LAYER DEPOSITION OF TRANSITION METAL THIN FILMS |
| 摘要 |
An atomic layer deposition method for forming metal films on a substrate comprises a deposition cycle including:
a) contacting a substrate with a vapor of a metal-containing compound described by formula 1 for a first predetermined pulse time to form a first modified surface:;MLn (1);wherein:
n is 1 to 8;
M is a transition metal;
L is a ligand;
b) contacting the first modified surface with an acid for a second predetermined pulse time to form a second modified surface; andc) contacting the second modified surface with a reducing agent for a third predetermined pulse time to form a metal layer. |
| 申请公布号 |
US2014234550(A1) |
申请公布日期 |
2014.08.21 |
| 申请号 |
US201214130987 |
申请日期 |
2012.06.05 |
| 申请人 |
Winter Charles H.;Knisley Thomas J.;Ariyasena Thiloka |
发明人 |
Winter Charles H.;Knisley Thomas J.;Ariyasena Thiloka |
| 分类号 |
C23C16/18 |
主分类号 |
C23C16/18 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of forming a metal film on a substrate, the method comprising a deposition cycle including:
a) contacting a substrate with a vapor of a metal-containing compound described by formula 1 for a first predetermined pulse time to form a first modified surface:
MLn (1)wherein:n is 1 to 8;M is a transition metal;L is a ligand;
b) contacting the first modified surface with an acid for a second predetermined pulse time to form a second modified surface; and c) contacting the second modified surface with a reducing agent for a third predetermined pulse time to form a metal layer. |
| 地址 |
Bloomfield Hills MI US |
