| 发明名称 |
FABRICATION OF POROUS SILICON ELECTROCHEMICAL CAPACITORS |
| 摘要 |
Methods of forming microelectronic structures are described. Embodiments of those methods may include forming an electrochemical capacitor device by forming pores in low-purity silicon materials. Various embodiments described herein enable the fabrication of high capacitive devices using low cost techniques. |
| 申请公布号 |
US2014233152(A1) |
申请公布日期 |
2014.08.21 |
| 申请号 |
US201113997881 |
申请日期 |
2011.12.27 |
| 申请人 |
Gardner Donald S.;Pint Cary L.;Holzwarth Charles W.;Jin Wei;Chen Zhaohui;Liu Yang;Hannah Eric C.;Gustafson John L. |
发明人 |
Gardner Donald S.;Pint Cary L.;Holzwarth Charles W.;Jin Wei;Chen Zhaohui;Liu Yang;Hannah Eric C.;Gustafson John L. |
| 分类号 |
H01G11/86;H01G11/30;H01G4/008 |
主分类号 |
H01G11/86 |
| 代理机构 |
|
代理人 |
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| 主权项 |
1. A method of making a charge storage structure, the method comprising: forming pores in a low-purity silicon substrate to form a low purity porous silicon structure. |
| 地址 |
Los Altos CA US |
