发明名称 |
RECESSED CONTACT TO SEMICONDUCTOR NANOWIRES |
摘要 |
A semiconductor nanowire device includes at least one semiconductor nanowire having a bottom surface and a top surface, an insulating material which surrounds the semiconductor nanowire, and an electrode ohmically contacting the top surface of the semiconductor nanowire. A contact of the electrode to the semiconductor material of the semiconductor nanowire is dominated by the contact to the top surface of the semiconductor nanowire. |
申请公布号 |
WO2014096962(A3) |
申请公布日期 |
2014.08.21 |
申请号 |
WO2013IB03176 |
申请日期 |
2013.12.06 |
申请人 |
SOL VOLTAICS AB |
发明人 |
ÅBERG, INGVAR;MAGNUSSON, MARTIN;ASOLI, DAMIR;SAMUELSON, LARS IVAR;OHLSSON, JONAS |
分类号 |
H01L31/068;B82Y10/00;H01L21/283;H01L29/45;H01L31/0224;H01L31/0693;H01L33/06 |
主分类号 |
H01L31/068 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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