SOI WAFER MANUFACTURING METHOD AND SOI WAFER

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method of an SOI wafer which has a small SOI layer film thickness range, and less surface roughness of an SOI layer surface, and a smooth shape of a terrace, and no defect such as voids and blisters in the SOI layer.SOLUTION: A manufacturing method of an SOI wafer of manufacturing an SOI wafer comprises: performing a plasma treatment on at least one surface of a bonding surface of a bond wafer and a bonding surface of a base wafer; subsequently bonding the bonding surfaces via an oxide film; and performing a heat treatment for peeling. The heat treatment for peeling includes a first step of performing a heat treatment at a temperature of 250°C or lower for two hours or longer; and a second step of performing a heat treatment at a temperature of not lower than 400°C and not higher than 450°C for 30 minutes or longer thereby to peel off the bond wafer by an ion implantation layer.