THERMAL PROCESSING METHOD AND THERMAL PROCESSING APPARATUS FOR HEATING SUBSTRATE, AND SUSCEPTOR

摘要

A semiconductor wafer with (100) plane orientation has two orthogonal cleavage directions. A notch is provided so as to indicate one of these directions. During irradiation with a flash, the semiconductor wafer warps about one of two radii at an angle of 45 degrees with respect to the cleavage directions such that the upper surface thereof becomes convex, and the opposite ends of the other radii become the lowest position. Eight support pins in total are provided in upright position on the upper surface of a holding plate of a susceptor while being spaced at intervals of 45 degrees along the same circumference. The semiconductor wafer is placed on the susceptor such that any of the support pins supports a radius at an angle of 45 degrees with respect to a cleavage direction.

主权项

1. A thermal processing method that heats a substrate of a circular plate shape by irradiating the substrate with a flash, comprising the steps of:
(a) placing a substrate on a susceptor on which a plurality of support pins is provided in upright position and supporting a lower surface of said substrate with the support pins; and (b) heating said substrate by irradiating an upper surface of said substrate on said susceptor with a flash from a flash lamp, wherein said substrate is placed in said step (a) such that any of said support pins supports a radius connecting a portion of said substrate and the center of said substrate, the portion becoming the lowest position when said substrate warps in response to irradiation with a flash in said step (b) such that the upper surface of said substrate becomes convex.