METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM

摘要

A thin film that has a predetermined composition and containing predetermined elements is formed on a substrate by performing a cycle of steps a predetermined number of times, said cycle comprising: a step wherein a first layer containing the predetermined elements, nitrogen and carbon is formed on the substrate by alternately performing, a predetermined number of times, a process of supplying a first source gas containing a predetermined element and a halogen group to the substrate and a process of supplying a second source gas containing a predetermined element and an amino group to the substrate; a step wherein a second layer is formed by modifying the first layer by supplying an amine-based source gas to the substrate; and a step wherein a third layer is formed by modifying the second layer by supplying a reaction gas that is different from the source gases to the substrate.

主权项

1. A method of manufacturing a semiconductor device, the method comprising forming a thin film having a predetermined composition and containing a predetermined element on a substrate by performing a cycle a predetermined number of times, the cycle comprising:
forming a first layer containing the predetermined element, nitrogen and carbon on the substrate by alternately performing a predetermined number of times: supplying a first source gas containing the predetermined element and a halogen group to the substrate in a process chamber; and supplying a second source gas containing the predetermined element and an amino group to the substrate in the process chamber; forming a second layer by modifying the first layer by supplying an amine-based source gas to the substrate in the process chamber; and forming a third layer by modifying the second layer by supplying a reactive gas different from the first source gas, the second source gas and the amine-based source gas to the substrate in the process chamber.