SEMICONDUCTOR DEVICE AND RELATED FABRICATION METHODS

摘要

Semiconductor device structures and related fabrication methods are provided. An exemplary semiconductor device structure includes a first vertical drift region of semiconductor material, a second vertical drift region of semiconductor material, and a buried lateral drift region of semiconductor material that abuts the vertical drift regions. In one or more embodiments, the vertical drift regions and buried lateral drift region have the same conductivity type, wherein a body region of the opposite conductivity type overlies the buried lateral drift region between the vertical drift regions.

主权项

1. A method of fabricating a transistor on an active region of semiconductor material having a first conductivity type, the method comprising:
forming a buried lateral drift region of semiconductor material having a second conductivity type within the active region; forming a first vertical drift region of semiconductor material having the second conductivity type within the active region, wherein the first vertical drift region abuts the buried lateral drift region; and forming a second vertical drift region of semiconductor material having the second conductivity type within the active region, wherein the second vertical drift region abuts the buried lateral drift region.