发明名称 |
Shadow mask attachable on substrate in process chamber of chemical vapor deposition reactor, in which vertical temperature gradient is formed, comprises mask body whose height dimension is less than its surface extension and window |
摘要 |
<p>Shadow mask (3) attachable on a substrate, in a process chamber (2) of a chemical vapor deposition reactor (1), in which a vertical temperature gradient is formed above a substrate carrying at least one susceptor, comprises a mask body (4) whose height dimension is substantially less than its surface extension and at least one window (5), whose edge defines the edge of a deposited layer on the substrate.</p> |
申请公布号 |
DE102013101586(A1) |
申请公布日期 |
2014.08.21 |
申请号 |
DE201310101586 |
申请日期 |
2013.02.18 |
申请人 |
AIXTRON SE |
发明人 |
PAHNKE, JAN;GERSDORFF, MARKUS |
分类号 |
C23C16/00;H01L21/3205 |
主分类号 |
C23C16/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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