COMPOSITION FOR FORMING RESIST UNDERLAYER FILM AND PATTERNING PROCESS

摘要

The invention provides a composition for forming a resist underlayer film including: as a component (A), a silicon-containing compound obtained by hydrolysis and/or condensation of one or more kinds of silicon compounds represented by the following general formula (A-1). There can be provided a composition for forming a resist underlayer film having etching selectivity relative to a conventional organic film and a silicon-containing film and favorable pattern adhesiveness relative to fine pattern even in a complicated patterning process.;R1Aa1R2Aa2R3Aa3Si(OR0A)(4-a1-a2-a3)  (A-1)

主权项

1. A composition for forming a resist underlayer film, comprising:
as a component (A), a silicon-containing compound obtained by hydrolysis and/or condensation of one or more kinds of silicon compounds represented by the following general formula (A-1),
R1Aa1R2Aa2R3Aa3Si(OR0A)(4-a1-a2-a3)  (A-1) wherein, ROA represents a hydrocarbon group having 1 to 6 carbon atoms; any one or more of R1A, R2A and R3A represents an organic group having nitrogen atom, sulfur atom, phosphorus atom, or iodine atom, and the other(s) are a hydrogen atom or a monovalent organic group having 1 to 30 carbon atoms; and a1, a2 and a3 represent 0 or 1 and satisfy 1≦a1+a2+a3≦3.