| 摘要 |
Provided is a semiconductor device that is provided with a plurality of unit transistors, each of which has: element isolation regions (103) formed on a semiconductor substrate (101); and a gate electrode (12), which is formed in a frame shape, and which is disposed on an active region (11) such that both the ends of the outer circumference of the gate electrode extend onto the element isolating regions, and the inner circumference thereof closes the active region, said active region being sandwiched between the element isolating regions. The active regions of the unit transistors adjacent to each other in the first direction (X) are electrically isolated from each other by means of the element isolating regions, and the active regions of the unit transistors adjacent to each other in the second direction (Y) intersecting the first direction are connected to each other. |
