TRENCH METAL OXIDE SEMICONDUCTOR WITH RECESSED TRENCH MATERIAL AND REMOTE CONTACTS

摘要

Remote contacts to the polysilicon regions of a trench metal oxide semiconductor (MOS) barrier Schottky (TMBS) device, as well as to the polysilicon regions of a MOS field effect transistor (MOSFET) section and of a TMBS section in a monolithically integrated TMBS and MOSFET (SKYFET) device, are employed. The polysilicon is recessed relative to adjacent mesas. Contact of the source metal to the polysilicon regions of the TMBS section is made through an extension of the polysilicon to outside the active region of the TMBS section. This change in the device architecture relieves the need to remove all of the oxides from both the polysilicon and silicon mesa regions of the TMBS section prior to the contact step. As a consequence, encroachment of contact metal into the sidewalls of the trenches in a TMBS device, or in a SKYFET device, is avoided.

主权项

1. A method of fabricating a semiconductor device comprising a trench metal oxide semiconductor (MOS) barrier Schottky (TMBS) device, said method comprising:
forming a plurality of first trenches separated by mesas, said first trenches having sidewalls of a first height; depositing conductive material within said first trenches to a height that is less than said first height; forming a layer of insulating material over said conductive material; forming a source metal layer over a first region that encompasses said first trenches and said mesas, wherein within said first region, said source metal layer is separated from said conductive material by said insulating material; and forming a first electrical contact between said source metal layer and said conductive material in said first trenches, wherein said first electrical contact is outside of said first region.