SEMICONDUCTOR LASERS AND ETCHED-FACET INTEGRATED DEVICES HAVING NON-UNIFORM TRENCHES

摘要

An edge-emitting etched-facet optical semiconductor structure includes a substrate, an active multiple quantum well (MQW) region formed on the substrate, a ridge waveguide formed over the MQW region extending in substantially a longitudinal direction between a waveguide first etched end facet disposed in a first window and a waveguide second etched end facet disposed in a second window, and first and second trenches having non-uniform widths extending in substantially the longitudinal direction between the first and second windows.

主权项

1. An edge-emitting optical semiconductor device, comprising:
a substrate; a first active multiple quantum well (MQW) region formed on the substrate; and a first ridge waveguide extending in substantially a longitudinal direction between a first waveguide first etched end facet and a first waveguide second etched end facet, the first ridge waveguide formed in a surface of the substrate over the first active MQW region, the first waveguide first and second etched end facets having optical coatings; wherein the first waveguide first etched end facet is disposed in a first window, and the first waveguide second etched end facet is disposed in a second window, the first and second windows extending in a depth direction from the first ridge waveguide to the substrate and through the first active MQW region, a first waveguide first trench extending in substantially the longitudinal direction between the first and second windows and extending in a depth direction from the first ridge waveguide to the substrate and through the first active MQW region, the first waveguide first trench being wider at a mid-portion of the first waveguide first trench than at end portions of the first waveguide first trench, a first waveguide second trench extending in substantially the longitudinal direction between the first and second windows and extending in a depth direction from the first ridge waveguide to the substrate and through the first active MQW region, the first waveguide second trench being wider at a mid-portion of the first waveguide second trench than at end portions of the first waveguide second trench, the first ridge waveguide extending between the first waveguide first trench and the first waveguide second trench.