发明名称 |
IMAGE SENSOR FOR MITIGATING DARK CURRENT |
摘要 |
One or more embodiments of techniques or systems for mitigating dark current of an image sensor are provided herein. Generally, a silicon interface, such as an edge of a dielectric region or an edge between a back side interface (BSI) region and a pass region, is a source of electrons or holes which cause dark current. In some embodiments, the image sensor includes a surface protect region. For example, the surface protect region is doped with a first doping type and a photo-diode of the image sensor is doped with the same first doping type. In this manner, the surface protect region acts as an electron magnet or a hole magnet for electrons or holes from the silicon interface, thus mitigating electrons or holes from the silicon interface from being collected by the photo-diode, for example. |
申请公布号 |
US2014231949(A1) |
申请公布日期 |
2014.08.21 |
申请号 |
US201313769421 |
申请日期 |
2013.02.18 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED |
发明人 |
Hung Feng-Chi;Yaung Dun-Nian;Liu Jen-Cheng;Tsai Shu-Ting;Tsai Shuang-Ji |
分类号 |
H01L31/0248 |
主分类号 |
H01L31/0248 |
代理机构 |
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代理人 |
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主权项 |
1. An image sensor for mitigating dark current, comprising:
a first region comprising a first doping type; a second region comprising a second doping type, the second doping type opposite of the first doping type, the first region surrounded by the second region; a silicon interface comprising at least one of an edge between the first region and a dielectric region or an edge between a back side interface (BSI) region and a pass region, the silicon interface located on at least one of a front side of the second region or a back side of the second region; and a surface protect region comprising the first doping type, the surface protect region adjacent to at least one of the silicon interface or the second region, thus mitigating dark current. |
地址 |
Hsin-Chu TW |