发明名称 |
SEMICONDUCTOR DEVICE HAVING SUFFICIENT PROCESS MARGIN AND METHOD OF FORMING SAME |
摘要 |
According to some embodiments of the invention, a substrate doped with a P type impurity is provided. An N type impurity is doped into the substrate to divide the substrate into a P type impurity region and an N type impurity region. Active patterns having a first pitch are formed in the P type and N type impurity regions. Gate patterns having a second pitch are formed on the active patterns in a direction substantially perpendicular to the active patterns. Other embodiments are described and claimed. |
申请公布号 |
US2014231925(A1) |
申请公布日期 |
2014.08.21 |
申请号 |
US201414264694 |
申请日期 |
2014.04.29 |
申请人 |
RYOO Man-Hyoung;YEO Gi-Sung;LEE Si-Hyeung;KIM Gyu-Chul;JUNG Sung-Gon;PARK Chang-Min;CHO Hoo-Sung |
发明人 |
RYOO Man-Hyoung;YEO Gi-Sung;LEE Si-Hyeung;KIM Gyu-Chul;JUNG Sung-Gon;PARK Chang-Min;CHO Hoo-Sung |
分类号 |
H01L27/088 |
主分类号 |
H01L27/088 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Sungnam-si KR |