| 发明名称 |
FIN FIELD EFFECT TRANSISTOR FABRICATED WITH HOLLOW REPLACEMENT CHANNEL |
| 摘要 |
A method for forming a FinFET comprises forming a raised fin between isolation trenches on a substrate. A plurality of sacrificial features is formed on at least a portion of the raised fin, the sacrificial features including a sacrificial gate dielectric and a sacrificial gate electrode having sidewalls. The sacrificial features on the raised fin are removed to form a hollow channel. Channel material is selectively and epitaxially grown in the hollow channel to form a channel. |
| 申请公布号 |
US2014231914(A1) |
申请公布日期 |
2014.08.21 |
| 申请号 |
US201313770993 |
申请日期 |
2013.02.19 |
| 申请人 |
Applied Materials, Inc. |
发明人 |
Chang Chorng-Ping;Wood Bingxi |
| 分类号 |
H01L27/12;H01L29/66 |
主分类号 |
H01L27/12 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for forming a finFET, the method comprising:
(a) forming a raised fin between isolation trenches on a substrate; (b) forming a plurality of sacrificial features on at least a portion of the raised fin, the sacrificial features including a sacrificial gate dielectric and a sacrificial gate electrode having sidewalls; (c) removing one or more of the sacrificial features on the raised fin to form a hollow channel; and (d) epitaxially growing channel material in the hollow channel to form a channel. |
| 地址 |
US |
