Vertical Tunneling Field-Effect Transistor Cell

摘要

A tunneling field-effect transistor (TFET) device is disclosed. The TFET device includes a source contact on the source region, a plurality of gate contacts at a planar portion of a gate stack and a plurality of drain contacts disposed on a drain region. The source contact of the TFET device aligns with other two adjacent source contacts of other two TFET devices such that each source contact locates in one of three angles of an equilateral triangle.

主权项

1. A semiconductor device comprising:
a substrate; a protrusion structure disposed over the substrate and protruding out of the plane of substrate; a gate stack disposed over the substrate, wherein the gate stack having a planar portion, which is symmetrically to the protrusion structure and parallel to the surface of substrate and a gating surface, which wraps around a middle portion of the frustoconical protrusion structure; and a source region disposed as a top portion of the frustoconical protrusion structure, including overlapping with a top portion of the gating surface of the gate stack; a drain region disposed over the substrate symmetrically adjacent to the protrusion structure and extending to a bottom portion of the protrusion structure as a raised drain region; a source contact disposed on the source region; a gate contact disposed on the planar portion of the gate stack; a drain contact disposed on the drain region; and the source contact aligns with other two source contacts of two adjacent semiconductor devices such that each source contact locates in one of three angles of an equilateral triangle.