CAPACITOR AND PREPARATION METHOD THEREOF

摘要

A capacitor and a method of fabricating thereof are provided. A structure of low pressure tetraethyl orthosilicate-low pressure silicon nitride-low pressure tetraethyl orthosilicate is used in the capacitor to replace the oxide-nitride-oxide structure of the existing capacitor; the capacitor has a relatively high unit capacitance value. Furthermore, the structure of low pressure tetraethyl orthosilicate—low pressure silicon nitride—low pressure tetraethyl orthosilicate is fabricaited by low pressure chemical vapor deposition method at relatively low temperature; thus the heat produced in the whole process is relatively low, which is insufficient to make the semiconductor device shift or make the gate metal layer or the metallized silicon layer peel off. Accordingly, the capacitor and the method of fabricating the capacitor of the present invention can be well applied in the process of the 0.5 μm PIP capacitor or below 0.5 μm.

主权项

1. A capacitor, comprising:
an upper conductive plate, a lower conductive plate, and an intermediate dielectric layer; wherein the intermediate dielectric layer comprises: a first low pressure tetraethyl orthosilicate layer disposed on the lower conductive plate; a low pressure silicon nitride layer disposed on the first low pressure tetraethyl ortho silicate layer; and a second low pressure tetraethyl orthosilicate layer disposed on the low pressure silicon nitride layer; wherein the second low pressure tetraethyl orthosilicate layer is disposed below the upper conductive plate.