| 发明名称 |
Vertical JFET with Integrated Body Diode |
| 摘要 |
A vertical junction field effect transistor (JFET) includes a drain, a source, a gate, a drift region, and a body diode. The source, gate, drift region, and body diode are all disposed in the same compound semiconductor epitaxial layer. The drain is vertically spaced apart from the source and the gate by the drift region. The body diode is connected between the drain and the source. |
| 申请公布号 |
US2014231883(A1) |
申请公布日期 |
2014.08.21 |
| 申请号 |
US201313771975 |
申请日期 |
2013.02.20 |
| 申请人 |
INFINEON TECHNOLOGIES AUSTRIA AG |
发明人 |
Esteve Romain;Ouvrard Cédric |
| 分类号 |
H01L29/10;H01L29/66;H01L29/808 |
主分类号 |
H01L29/10 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A vertical junction field effect transistor (JFET), comprising:
a drain; and a source, a gate, a drift region, and a body diode all disposed in the same compound semiconductor epitaxial layer, wherein the drain is vertically spaced apart from the source and the gate by the drift region, and the body diode is connected between the drain and the source. |
| 地址 |
Villach AT |
