发明名称
摘要 <P>PROBLEM TO BE SOLVED: To suppress the generation of a resist residue in a manufacturing method of a semiconductor light emitting element. <P>SOLUTION: An electrode forming process for forming an electrode in a laminated semiconductor layer on a substrate includes an electrode forming mask forming process (S401) for forming an inverse tapered mask with image reverse, an electrode material deposition process (S402), an electrode forming mask lift-off process (S403) and an alkaline cleaning process (S404) by an alkaline solution. Then, a protection layer forming process (S500) for forming a protection layer by covering the laminated semiconductor layer continues. <P>COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP5573138(B2) 申请公布日期 2014.08.20
申请号 JP20090279054 申请日期 2009.12.09
申请人 发明人
分类号 H01L33/36 主分类号 H01L33/36
代理机构 代理人
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