发明名称 BRAZING FILLER METAL, BRAZING FILLER METAL PASTE, CERAMIC CIRCUIT SUBSTRATE, CERAMIC MASTER CIRCUIT SUBSTRATE, AND POWER SEMICONDUCTOR MODULE
摘要 <p>To provide a brazing material for maintaining bonding strength between ceramic substrate and metal plate at a conventionally attainable level, while addition amount of In is reduced, and a brazing material paste using the same. A mixture powder provided by mixing alloy powder composed of Ag, In, and Cu, Agpowder, and active metal hydride powder, the mixture powder containing active metal hydride powder with a 10-to-25-µm equivalent circle average particle diameter by 0.5 to 5. 0 mass%, the equivalent circle average particle diameters for the alloy powder, Ag powder, and active metal hydride powder having a relationship: alloy powder ≥ active metal hydride powder &gt; Ag powder, and the powder mixture having a particle size distribution of d10 of 3 to 10 µm, d50 of 10 to 35 µm, and d90 of 30 to 50 µm, and in the frequency distribution, a peak of the distribution existing between d50 and d90.</p>
申请公布号 EP2727898(A9) 申请公布日期 2014.08.20
申请号 EP20120803785 申请日期 2012.07.02
申请人 HITACHI METALS, LTD. 发明人 IMAMURA, HISAYUKI;FUJITA, SUGURU;WATANABE, JUNICHI
分类号 C04B37/02;B23K35/22;B23K35/30;C22C5/06;H01L23/12;H05K3/38 主分类号 C04B37/02
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