METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

A method of manufacturing a semiconductor device comprises a step of forming a plurality of fins by forming a plurality of first device isolation trenches repeated with a first pitch on a substrate; a step of forming a first device isolation film within the first device isolation trenches and defining a plurality of fin-type active regions protruding from the upper surface of the first device isolation film; and a step of forming a plurality of second device isolation trenches repeated with a second pitch different from the first pitch on the substrate by etching a portion of the first device isolation film and the substrate, forming a second device isolation film within the second device isolation trenches, and forming a plurality of fin-type active region groups spaced apart from each other across the second device isolation film.