发明名称 METHOD FOR MANUFACTURING SILICON SUBSTRATE HAVING TEXTURED STRUCTURE
摘要 <p>The present invention provides a method for manufacturing a silicon substrate having texture structure, by which, in comparison with conventional methods, it is possible to reduce manufacturing step and form easily regular texture structure on silicon substrate surface. The method of the present invention comprises the steps of: (A) forming a pattern on the silicon substrate using a resin-comprising composition; (B) irradiating an etching gas to the silicon substrate surface other than the pattern portion; and (C) processing the silicon substrate irradiated with the etching gas with an alkaline etching fluid to form concave structure under the pattern portion. Furthermore, the present invention provides a resin-comprising composition usable in the method, in particular, a composition comprising photo-curable resin.</p>
申请公布号 KR20140101765(A) 申请公布日期 2014.08.20
申请号 KR20147015622 申请日期 2012.12.06
申请人 TOKUYAMA CORPORATION 发明人 UMEKAWA HIDEKI;MATSUI SHINJI;OMOTO SHINYA
分类号 H01L21/306;H01L21/3065;H01L21/308;H01L31/04;H01L33/22 主分类号 H01L21/306
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