| 摘要 |
The present invention relates to a method for processing substrates which performs crystallization by aligning substrates and, more particularly, to a method for processing substrates which keeps a position of a crystallization pattern of a laser beam accurate. An embodiment of the present invention comprises a process of aligning a first substrate which aligns a first substrate with a starting position of a first substrate, so that an alignment mark marked on the first substrate and a preset reference point correspond to one another; a process of patterning crystallization which conveys the first substrate back and forth, and radiates a laser beam to a crystallization target area of the first substrate to form a crystallization pattern; a process of calculating a correction reference point which calculates a deviation of correction according to a separated distance from the edge of the crystallization pattern of the first substrate to a central point of the alignment mark, and calculates the correction reference point reflecting the deviation of correction; and a process of aligning a second substrate which aligns an alignment mark on a second substrate loaded in a chamber after the first substrate is discharged with the correction reference point, so that the alignment mark on the second substrate and the correction reference point correspond to one another. |
