发明名称 MONOLITHIC CELL FOR AN INTEGRATED CIRCUIT AND ESPECIALLY A MONOLITHIC SWITCHING CELL
摘要 A cell includes at least two semiconductor structures of the same nature, these two structures both employing voltages and currents that are unidirectional, each structure having an anode (10), a cathode (14) and optionally a gate (16). The structures are integrated into the volume of one and the same semiconductor substrate (4). The cathodes (14), and possibly the gates (16), are arranged on a first side of the semiconductor substrate (4). The anodes (10) are each arranged on a second side of the semiconductor substrate (4), which side is opposite the first side, facing the cathodes and possibly the corresponding gates. Two electrodes, anodes or cathodes, of two separate structures, are electrically connected to each other.
申请公布号 EP2766932(A1) 申请公布日期 2014.08.20
申请号 EP20120781377 申请日期 2012.10.09
申请人 CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE (CNRS);INSTITUT NATIONAL POLYTECHNIQUE DE TOULOUSE (INPT) 发明人 BOURENNANE, ABDELHAKIM;BREIL-DUPUY, MARIE;RICHARDEAU, FRÉDÉRIC;SANCHEZ, JEAN-LOUIS
分类号 H01L27/08;H01L21/8234;H01L27/082;H01L27/088 主分类号 H01L27/08
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