发明名称 |
MONOLITHIC CELL FOR AN INTEGRATED CIRCUIT AND ESPECIALLY A MONOLITHIC SWITCHING CELL |
摘要 |
A cell includes at least two semiconductor structures of the same nature, these two structures both employing voltages and currents that are unidirectional, each structure having an anode (10), a cathode (14) and optionally a gate (16). The structures are integrated into the volume of one and the same semiconductor substrate (4). The cathodes (14), and possibly the gates (16), are arranged on a first side of the semiconductor substrate (4). The anodes (10) are each arranged on a second side of the semiconductor substrate (4), which side is opposite the first side, facing the cathodes and possibly the corresponding gates. Two electrodes, anodes or cathodes, of two separate structures, are electrically connected to each other. |
申请公布号 |
EP2766932(A1) |
申请公布日期 |
2014.08.20 |
申请号 |
EP20120781377 |
申请日期 |
2012.10.09 |
申请人 |
CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE (CNRS);INSTITUT NATIONAL POLYTECHNIQUE DE TOULOUSE (INPT) |
发明人 |
BOURENNANE, ABDELHAKIM;BREIL-DUPUY, MARIE;RICHARDEAU, FRÉDÉRIC;SANCHEZ, JEAN-LOUIS |
分类号 |
H01L27/08;H01L21/8234;H01L27/082;H01L27/088 |
主分类号 |
H01L27/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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