| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device provided with a flash memory cell which can prevent an occurrence of failure in a logic circuit and the like formed in a peripheral circuit region, and to provide a manufacturing method thereof. SOLUTION: A semiconductor device manufacturing method comprises the steps of: removing a second insulation film 26 on a contact region CR of a first conductor 25a; forming a second conductive film 30 on the second insulation film 26; removing the second conductive film 30 on the contact region CR of the first conductor 25a to turn the second conductive film 30 to be a second conductor 30a; forming an interlayer insulation film (third insulation film ) 44 covering the second conductor 30a; forming on the interlayer insulation film 44 on the contact region CR, a first hole 44a spaced apart from the second insulation film 26; and forming in the first hole 44a, a conductive plug 45a electrically connected with the contact region CR. COPYRIGHT: (C)2013,JPO&INPIT |
