Semiconductor light emitting device and method for manufacturing the same

摘要

According to one embodiment, a semiconductor light emitting device (1, 2, 3, 5) includes a semiconductor layer (15), a p-side electrode (16), an n-side electrode (17) and a fluorescent material layer (30). The semiconductor layer has a first surface (15a) and a second surface (15b) on an opposite side to the first surface and includes a light emitting layer (13). The fluorescent material layer includes a plurality of fluorescent materials (31) and a bonding material integrating the fluorescent materials. The fluorescent material layer (30) includes a lower layer portion (35) provided to spread over the entire first surface and having a larger thickness than a size of the fluorescent materials and an upper layer portion (36) partially provided on the lower layer portion and having a larger thickness and a larger width than a size of the fluorescent materials (31). The fluorescent materials do not exist on a portion of the lower layer portion not provided with the upper layer portion.