发明名称 |
SPIN TRANSFER TORQUE MEMORY (STTM) DEVICE WITH HALF-METAL AND METHOD TO WRITE AND READ THE DEVICE |
摘要 |
Spin transfer torque memory (STTM) devices with half-metals and methods to write and read the devices are described. For example, a magnetic tunneling junction includes a free magnetic layer, a fixed magnetic layer, and a dielectric layer disposed between the free magnetic layer and the fixed magnetic layer. One or both of the free magnetic layer and the fixed magnetic layer includes a half-metal material at an interface with the dielectric layer. |
申请公布号 |
KR20140101811(A) |
申请公布日期 |
2014.08.20 |
申请号 |
KR20147016514 |
申请日期 |
2011.12.19 |
申请人 |
INTEL CORP. |
发明人 |
KUO CHARLES C.;MOJARAD ROKSANA GOLIZADEH;DOYLE BRIAN S.;KENCKE DAVID L.;OGUZ KAAN;CHAU ROBERT S. |
分类号 |
H01L43/08;H01L21/8247;H01L27/115 |
主分类号 |
H01L43/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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