发明名称 Light emitting diode
摘要 <p>The present invention provides a light emitting diode (2), which comprises a first LED die (20a) and a second LED die (20b), each die comprising a first semi-conductive layer (200), a second semi-conductive layer (202), and a multiple quantum well layer (201) disposed between the first (200) and the second (202) semi-conductive layers, wherein the first semi-conductive layer (200) of the first LED die (20a) is coupled to the second semi-conductive layer (202) of the second LED die (20b) so as to form a serially connected structure whereby the consuming current and heat generation of the light emitting diode (2) are lowered so that the size of heat dissipating device for the light emitting diode (2) can be reduced and illumination of the light emitting diode can be enhanced. </p>
申请公布号 EP2704195(A3) 申请公布日期 2014.08.20
申请号 EP20120189357 申请日期 2012.10.19
申请人 SEMILEDS OPTOELECTRONICS CO., LTD. 发明人 DOAN, TRUNG-TRI;CHENG, CHAO-CHEN;SHIH, YI-FENG
分类号 H01L25/075;H01L27/15;H01L33/62 主分类号 H01L25/075
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