METHOD TO WELD LEAD IN SEMICONDUCTOR DEVICE

摘要

FIELD: electricity.SUBSTANCE: additional pressure is applied with reduction of amplitude of ultrasonic oscillations to zero. At the moment of application of additional pressure to a V-shaped electrode, a higher current pulse is applied, providing for initiation of plastic deformation of connected materials due to jump-like increase of temperature in the connection area.EFFECT: simplified design of a welding unit, increased strength of welded joints, reduced welding time and increased reliability of power semiconductor devices.1 dwg