发明名称
摘要 PROBLEM TO BE SOLVED: To allow a recessed portion resulting from a fuse opening so that it is not formed.SOLUTION: A method of manufacturing a semiconductor device includes the steps of discharging a paste-like resin 60 from a liquid discharge head 82 to a fuse opening 13b, formed on an insulating layer 31 which is film-formed on a surface of a semiconductor wafer 50; embedding the fuse opening 13b by the paste-like resin 60 and then hardening the same; forming an embedded resin 14 formed by hardening the paste-like resin 60; forming a wiring 23 on an insulating layer 31 and embedded resin 14 due to the hardening of the paste-like resin 60; forming a columnar electrode on a columnar electrode 25 at an end of the wiring 23; and laminating a sealing layer 26 on the insulating layer 31, at the periphery of the columnar electrode 25 so that the wiring 23 is covered by the sealing layer 26.
申请公布号 JP5574780(B2) 申请公布日期 2014.08.20
申请号 JP20100076962 申请日期 2010.03.30
申请人 发明人
分类号 H01L21/768;H01L21/3205;H01L23/12;H01L23/522 主分类号 H01L21/768
代理机构 代理人
主权项
地址