发明名称 RETENTION-DRIFT-HISTORY-BASED NON-VOLATILE MEMORY READ THRESHOLD OPTIMIZATION
摘要 An SSD controller dynamically adjusts read thresholds in an NVM to reduce errors due to device threshold voltage distribution shifts, thus improving performance, reliability, and/or costs of a storage sub-system, such as an SSD. A retention drift clock uses one or more reference pages (or ECC units or blocks) on one or more NVM die as read threshold over time/temperature references, and uses a function of those values as a measure of drift (over time/temperature). At some initial time, the one or more reference pages are programmed and an initial read threshold is measured for each of the one or more reference pages. In some embodiments, read threshold values are averaged among one or more of: all references pages on the same die; and all reference pages in the same one or more die in an I/O device.
申请公布号 KR20140101690(A) 申请公布日期 2014.08.20
申请号 KR20140014901 申请日期 2014.02.10
申请人 LSI CORPORATION 发明人 COHEN EARL T.;ZHONG HAO
分类号 G11C16/34 主分类号 G11C16/34
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