| 摘要 |
A gas processing apparatus includes a chamber 40 configured to accommodate a wafer W; a transfer mechanism 17 configured to continuously transfer a plurality of wafers W one by one into the chamber 40; a gas supply mechanism configured to supply into the chamber 40 a process gas having a clinging property and prepared for performing a gas process on each of the wafers W; and a control section 90 preset to control the gas supply mechanism and the transfer mechanism to supply the process gas into the chamber before transferring a first target object into the chamber, and then to transfer the first target object into the chamber after the elapse of a predetermined time. |
