发明名称 Method of controlling memory, memory control circuit, storage device and electronic device
摘要 A method of controlling a memory including a first storage area and a second storage area. The method includes determining, in response to a request for writing a write data string, whether the write data string changes a logical value stored in the memory from a first logical value to a second logical value, writing, to the first storage area, a logical value that is located in a position of the write data string and does not change an existing logical value of the memory from the first logical value to the second logical value, and writing the second logical value that is located in a position of the write data string and changes an existing logical value of the memory from the first logical value to the second logical value to the second storage area which is different from the first storage area.
申请公布号 US8812767(B2) 申请公布日期 2014.08.19
申请号 US201213352436 申请日期 2012.01.18
申请人 Fujitsu Semiconductor Limited 发明人 Sawa Kazuya
分类号 G06F12/00;G06F13/00;G11C16/10;G06F12/02 主分类号 G06F12/00
代理机构 Fujitsu Patent Center 代理人 Fujitsu Patent Center
主权项 1. A method of controlling a memory including first and second storage areas which include a plurality of memory cells, the method comprising: determining, in response to a request for writing a write data string, whether the write data string includes a logical value-changing portion that changes a logical value stored in a memory cell of the plurality of the memory cells from a first logical value to a second logical value which is different from the first logical value; writing, to the first storage area, a logical value-unchanging portion of the write data string other than the logical value-changing portion of the write data string, wherein the logical value-changing portion of the write data string is not written to the first storage; and inverting a logical value of the logical value-changing portion of the write data string from the second logical value to the first logical value and writing the inverted logical value of the logical value-changing portion of the write data string to the second storage area which is different from the first storage area, wherein the logical value-unchanging portion of the write data string is not written to the second storage area.
地址 Yokohama JP