Partially depleted (PD) semiconductor-on-insulator (SOI) field effect transistor (FET) structure with a gate-to-body tunnel current region for threshold voltage (Vt) lowering and method of forming the structure

摘要

Disclosed are embodiments of a field effect transistor with a gate-to-body tunnel current region (GTBTCR) and a method. In one embodiment, a gate, having adjacent sections with different conductivity types, traverses the center portion of a semiconductor layer to create, within the center portion, a channel region and a GTBTCR below the adjacent sections having the different conductivity types, respectively. In another embodiment, a semiconductor layer has a center portion with a channel region and a GTBTCR. The GTBTCR comprises: a first implant region adjacent to and doped with a higher concentration of the same first conductivity type dopant as the channel region; a second implant region, having a second conductivity type, adjacent to the first implant region; and an enhanced generation and recombination region between the implant regions. A gate with the second conductivity type traverses the center portion.

主权项

1. A field effect transistor structure comprising:
a semiconductor layer having end portions and a center portion between said end portions, said center portion having an area that extends laterally beyond said end portions and said center portion comprising:
a channel region between said end portions, said channel region being doped with a first conductivity type dopant such that said channel region has a first conductivity type; anda gate-to-body tunnel current region in said area that extends laterally beyond said end portions, said gate-to-body tunnel current region comprising:
a first implant region immediately adjacent to said channel region and doped with said first conductivity type dopant at a higher concentration than said channel region;a second implant region adjacent to said first implant region and doped with a second conductivity type dopant different from said first conductivity type dopant such that said second implant region has a second conductivity type different from said first conductivity type; andan enhanced generation and recombination region at a junction between said first implant region and said second implant region; and a gate structure traversing said center portion.