发明名称 Gate circuit
摘要 A gate circuit includes a gate resistive element connected at one end to the gate of a power device, an on-switching device connected between a power supply and the other end of the gate resistive element, a first resistive element whose connection to the gate is controlled by a first switching device, a second resistive element whose connection to the gate is controlled by a second switching device, and having a higher resistance value than the first resistive element, excessive current suppression means for turning on the first switching device just when the current in the power device reaches a predetermined value, and turn-off delay means for, after the excessive current suppression means turns on the first switching device, turning off the on-switching device and the first switching device and turning on the second switching device to turn off the power device.
申请公布号 US8810984(B2) 申请公布日期 2014.08.19
申请号 US201113313466 申请日期 2011.12.07
申请人 Mitsubishi Electric Corporation 发明人 Hussein Khalid Hassan;Yamamoto Akira;Wada Fumio
分类号 H02H9/02 主分类号 H02H9/02
代理机构 Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P. 代理人 Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
主权项 1. A gate circuit comprising: a gate resistive element connected at one end to the gate of a power device; an on-switching device connected between a power supply and the other end of said gate resistive element; a first resistive element connected at one end to said gate; a first switching device connected at one end to the other end of said first resistive element and at the other end to ground; a second resistive element connected at one end to said gate and having a higher resistance value than said first resistive element; a second switching device connected at one end to the other end of said second resistive element and at the other end to ground; excessive current suppression means for turning on said first switching device just when the current in said power device reaches a predetermined value; and turn-off delay means for, after said excessive current suppression means turns on said first switching device, turning off said on-switching device and said first switching device and turning on said second switching device to turn off said power device.
地址 Tokyo JP