发明名称 On-chip capacitors with a variable capacitance for a radiofrequency integrated circuit
摘要 Methods of fabricating an on-chip capacitor with a variable capacitance, as well as methods of adjusting the capacitance of an on-chip capacitor and design structures for an on-chip capacitor. The method includes forming first and second ports configured to be powered with opposite polarities, first and second electrodes, and first and second voltage-controlled units. The method includes configuring the first voltage-controlled unit to selectively couple the first electrode with the first port, and the second voltage-controlled unit to selectively couple the second electrode with the second port. When the first electrode is coupled by the first voltage-controlled unit with the first port and the second electrode is coupled by the second voltage-controlled unit with the second port, the capacitance of the on-chip capacitor increases.
申请公布号 US8809144(B2) 申请公布日期 2014.08.19
申请号 US201213534355 申请日期 2012.06.27
申请人 International Business Machines Corporation 发明人 Daley Douglas M.;Erturk Mete;Gordon Edward J.
分类号 H01L21/8234 主分类号 H01L21/8234
代理机构 Wood, Herron & Evans LLP 代理人 Wood, Herron & Evans LLP ;Canale Anthony J.
主权项 1. A method of fabricating an on-chip capacitor having a variable capacitance, the method comprising: forming first and second ports in a dielectric layer that are configured to be powered with opposite polarities and that have a parallel arrangement; forming a first and second electrodes in the dielectric layer with a parallel arrangement in a space between the first and second ports and aligned transverse to the first and second ports, wherein the first electrode has an end separated from the first port by a first gap so that the first port and the end of the first electrode lack direct physical connection, and the second electrode has an end separated from the second port by a second gap so that the second port and the end of the second electrode lack direct physical connection; forming a first voltage-controlled unit configured to selectively open and close a first current path coupling the first electrode with the first port; and forming a second voltage-controlled unit configured to selectively open and close a second current path coupling with the second port; wherein the on-chip capacitor has a larger capacitance value when the first electrode is coupled by the first voltage-controlled unit with the first port and the second electrode is coupled by the second voltage-controlled unit with the second port than when the first and second electrodes are electrically isolated from the first and second ports.
地址 Armonk NY US