| 摘要 |
An optoelectronic component includes an optical pump device including a first radiation-generating layer and a first radiation exit area at a top side of the pump device, wherein electromagnetic radiation generated during operation of the pump device is coupled out from the pump device through the first radiation exit area transversely and at least in part non-perpendicularly with respect to the first radiation-generating layer, and a surface emitting semiconductor laser chip including a reflective layer sequence including a Bragg mirror, and a second radiation-generating layer, wherein the surface emitting semiconductor laser chip is fixed to the top side of the pump device, and the reflective layer sequence is arranged between the first radiation exit area and the second radiation-generating layer. |
| 主权项 |
1. An optoelectronic component comprising:
an optical pump device formed by an electrically pumped semiconductor laser chip and comprising a first radiation-generating layer, a single laser resonator and a first radiation exit area at a top side of the pump device, wherein electromagnetic radiation generated during operation of the pump device is coupled out from the pump device through the first radiation exit area transversely and at least in part non-perpendicularly with respect to the first radiation-generating layer, and a surface emitting semiconductor laser chip comprising a reflective layer sequence comprising a Bragg mirror, and a second radiation-generating layer, wherein 1) the surface emitting semiconductor laser chip is fixed to the top side of the pump device, 2) the reflective layer sequence is arranged between the first radiation exit area and the second radiation-generating layer, 3) two resonator mirrors delimit the first radiation-generating layer in a lateral direction, 4) the two resonator mirrors run perpendicularly to the first radiation-generating layer at least in places, 5) the surface emitting semiconductor laser chip has the following layer sequence at a side facing the pump device: a passivation layer formed with a dielectric layer, an etching stop layer, and the reflective layer sequence wherein the passivation layer is arranged facing the pump device and the etching stop layer is arranged between the passivation layer and reflective layer sequence, 6) the layer sequence has a transmissivity of at least 85% for electromagnetic radiation coupled out from the pump device, 7) each of said two resonator mirrors is located in a recess formed in semiconductor layers of the electrically pumped semiconductor laser chip, 8) the resonator mirrors are covered by a p-contact metal in said recesses, and 9) in a lateral direction, the p-contact metal is completely surrounded by the semiconductor layers of the electrically pumped semiconductor laser chip. |
