Semiconductor device and method for fabricating the same

摘要

An exemplary semiconductor device comprises a through silicon via penetrating a semiconductor substrate including a circuit pattern on one side of the substrate, a first doped layer formed in the other side, and a bump connected with the through silicon via.

主权项

1. A semiconductor device, comprising:
a semiconductor substrate having a first conductivity; a plurality of metal lines disposed on a first side of the semiconductor substrate; a through silicon via penetrating the semiconductor substrate; a first doped layer disposed in a second side of the semiconductor substrate, the first doped layer having a second conductivity by implanted ions; a second doped layer disposed on the first doped layer and having the first conductivity; and a bump disposed on the second side of the semiconductor substrate and coupled to the through silicon via.