Method and structure for a MRAM device with a bilayer passivation

摘要

The present disclosure provides a magnetoresistive random access memory (MRAM) device. The MRAM device includes a magnetic tunnel junction (MTJ) stack on a substrate; and a dual-layer passivation layer disposed around the MTJ stack. The dual-layer passivation layer includes an oxygen-free film formed adjacent sidewalls of the MTJ stack; and a moisture-blocking film formed around the oxygen-free film.

主权项

1. A magnetoresistive random access memory (MRAM) device comprising:
a magnetic tunnel junction (MTJ) stack on a substrate; a dual-layer passivation layer disposed around the MTJ stack; and a dielectric layer formed over the dual-passivation layer, the dielectric layer comprising a first material; wherein the dual-layer passivation layer includes:
a first film formed adjacent sidewalls of the MTJ stack, wherein the first film comprises a second material different from the first material and has an oxygen concentration of less than ten atomic percent, anda moisture-blocking film formed around the first film, wherein the moisture-blocking film comprises a third material different from the first and second materials and includes a metal oxide.