发明名称 |
Semiconductor wafer, semiconductor wafer manufacturing method, and electronic device |
摘要 |
A high-quality GaAs-type crystal thin film using an inexpensive Si wafer with good thermal release characteristics is achieved. Provided is a semiconductor wafer comprising an Si wafer; a Ge layer that is crystal-grown on the wafer and shaped as an isolated island; a buffer layer that is crystal-grown on the Ge layer and is a group 3-5 compound semiconductor layer containing P; and a functional layer that is crystal-grown on the buffer layer. The Ge layer may be shaped as an island having a size that does not exceed double a distance moved by crystal defects as a result of annealing the Ge layer at a certain temperature for a certain time. The Ge layer may be shaped as an island having a size for which stress due to a difference relative to a thermal expansion coefficient of Si, which is material of the wafer, does not cause crystal defects when the Ge layer is annealed at a certain temperature. |
申请公布号 |
US8809908(B2) |
申请公布日期 |
2014.08.19 |
申请号 |
US200812811038 |
申请日期 |
2008.12.26 |
申请人 |
Sumitomo Chemical Company, Limited |
发明人 |
Takada Tomoyuki;Yamanaka Sadanori;Hata Masahiko |
分类号 |
H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
Sughrue Mion, PLLC |
代理人 |
Sughrue Mion, PLLC |
主权项 |
1. A semiconductor wafer comprising:
an Si wafer; a Ge layer that is crystal-grown on the wafer and shaped as an isolated island; a buffer layer that is crystal-grown on the Ge layer and is a group 3-5 compound semiconductor layer containing phosphorus; and a functional layer that is crystal-grown on the buffer layer. |
地址 |
Tokyo JP |