发明名称 Light emitting element with improved light extraction efficiency, light emitting device comprising the same, and fabricating method of the light emitting element and the light emitting device
摘要 Provided is a light emitting element, a light emitting device including the same, and fabrication methods of the light emitting element and light emitting device. The light emitting device comprises a substrate, a light emitting structure including a first conductive layer of a first conductivity type, a light emitting layer, and a second conductive layer of a second conductivity type which are sequentially stacked, a first electrode which is electrically connected with the first conductive layer; and a second electrode which is electrically connected with the second conductive layer and separated apart from the first electrode, wherein at least a part of the second electrode is connected from a top of the light emitting structure, through a sidewall of the light emitting structure, and to a sidewall of the substrate.
申请公布号 US8809888(B2) 申请公布日期 2014.08.19
申请号 US201313800188 申请日期 2013.03.13
申请人 Samsung Electronics Co., Ltd. 发明人 Kim Yu-Sik;Hwang Seong-Deok;Lee Seung-Jae;Youn Sun-Pil
分类号 H01L33/00 主分类号 H01L33/00
代理机构 Onello & Mello, LLP 代理人 Onello & Mello, LLP
主权项 1. A light emitting element comprising: a substrate including sidewalls having a slope; a light emitting structure including a first conductive layer of a first conductivity type, a light emitting layer, and a second conductive layer of a second conductivity type which are sequentially stacked; a dielectric layer conformally foamed on the sidewalls of the substrate; a first electrode electrically connected to the first conductive layer; and a second electrode electrically connected to the second conductive layer and spaced apart from the first electrode, wherein the dielectric layer overlaps a portion of at least one sidewall of the light emitting structure, and wherein the dielectric layer overlaps the first conductive layer without overlapping the second conductive layer.
地址 KR