发明名称 |
Light emitting element with improved light extraction efficiency, light emitting device comprising the same, and fabricating method of the light emitting element and the light emitting device |
摘要 |
Provided is a light emitting element, a light emitting device including the same, and fabrication methods of the light emitting element and light emitting device. The light emitting device comprises a substrate, a light emitting structure including a first conductive layer of a first conductivity type, a light emitting layer, and a second conductive layer of a second conductivity type which are sequentially stacked, a first electrode which is electrically connected with the first conductive layer; and a second electrode which is electrically connected with the second conductive layer and separated apart from the first electrode, wherein at least a part of the second electrode is connected from a top of the light emitting structure, through a sidewall of the light emitting structure, and to a sidewall of the substrate. |
申请公布号 |
US8809888(B2) |
申请公布日期 |
2014.08.19 |
申请号 |
US201313800188 |
申请日期 |
2013.03.13 |
申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
Kim Yu-Sik;Hwang Seong-Deok;Lee Seung-Jae;Youn Sun-Pil |
分类号 |
H01L33/00 |
主分类号 |
H01L33/00 |
代理机构 |
Onello & Mello, LLP |
代理人 |
Onello & Mello, LLP |
主权项 |
1. A light emitting element comprising:
a substrate including sidewalls having a slope; a light emitting structure including a first conductive layer of a first conductivity type, a light emitting layer, and a second conductive layer of a second conductivity type which are sequentially stacked; a dielectric layer conformally foamed on the sidewalls of the substrate; a first electrode electrically connected to the first conductive layer; and a second electrode electrically connected to the second conductive layer and spaced apart from the first electrode, wherein the dielectric layer overlaps a portion of at least one sidewall of the light emitting structure, and wherein the dielectric layer overlaps the first conductive layer without overlapping the second conductive layer. |
地址 |
KR |