发明名称 |
Thin-film transistor array substrate, organic light-emitting display having the same, and method of manufacturing the organic light-emitting display |
摘要 |
A thin-film transistor array substrate, an organic light-emitting display having the same, and a method of manufacturing the organic light-emitting display are disclosed. In one embodiment, the thin-film transistor array substrate includes a buffer layer formed on a substrate, a first insulating layer formed on the buffer layer, a pixel electrode formed on the first insulating layer using a transparent conductive material, an intermediate layer that covers an upper side and outer side-surfaces of the pixel electrode and includes a organic light-emitting layer, a gap formed by etching the first insulating layer and the buffer layer at a peripheral of the pixel electrode, and a facing electrode that is formed on an upper side and outer side-surfaces of the pixel electrode to cover the intermediate layer and the gap. |
申请公布号 |
US8809863(B2) |
申请公布日期 |
2014.08.19 |
申请号 |
US201113312629 |
申请日期 |
2011.12.06 |
申请人 |
Samsung Display Co., Ltd. |
发明人 |
Kim Dae-Woo;Park Jong-Hyun;Lee Yul-Kyu |
分类号 |
H01L29/72 |
主分类号 |
H01L29/72 |
代理机构 |
Knobbe, Martens, Olson & Bear, LLP |
代理人 |
Knobbe, Martens, Olson & Bear, LLP |
主权项 |
1. A thin-film transistor array substrate comprising:
a buffer layer formed on a substrate; a first insulating layer formed on the buffer layer; a pixel electrode formed on the first insulating layer, wherein the pixel electrode is formed at least partially of a transparent conductive material; an intermediate layer that covers an upper side and outer side-surfaces of the pixel electrode and comprises an organic light-emitting layer; a gap formed at a peripheral of the pixel electrode, wherein the gap is formed between an etch surface of the buffer layer and the outer side-surfaces of the pixel electrode; and a facing electrode covering the intermediate layer and formed in the gap. |
地址 |
Gyeonggi-do KR |