| 摘要 |
<p>Generally, atomic deposition technology includes a step of simply exposing a surface of a substrate to a precursor in an atomic layer deposition chamber, and a step of discharging discharge gas such as nitrogen to the chamber before exposing the substrate to a second precursor. With a series of cycles, microscopically thin film layers are deposited on a substrate surface processed more to generate a semiconductor component. To reduce unintended oxygen deposition, a chamber is exhausted at a vacuum level of 10e-06torr-liters/second which is suitable for technology relating to chemical deposition. However, by the exposure of each layer regarding the remaining oxygen in the chamber, atomic layer deposition is apparently sensitive against oxygen pollution. To reduce oxygen pollution, the atomic layer deposition is performed at a high vacuum level which is not higher than about 10e-06torr-liters/second so that more strict process control is achieved.</p> |
