| 发明名称 | Micro light emitting diode | ||
| 摘要 | A micro light emitting diode (LED) and a method of forming an array of micro LEDs for transfer to a receiving substrate are described. The micro LED structure may include a micro p-n diode and a metallization layer, with the metallization layer between the micro p-n diode and a bonding layer. A conformal dielectric barrier layer may span sidewalls of the micro p-n diode. The micro LED structure and micro LED array may be picked up and transferred to a receiving substrate. | ||
| 申请公布号 | US8809875(B2) | 申请公布日期 | 2014.08.19 |
| 申请号 | US201213372222 | 申请日期 | 2012.02.13 |
| 申请人 | LuxVue Technology Corporation | 发明人 | Bibl Andreas;Higginson John A.;Law Hung-Fai Stephen;Hu Hsin-Hua |
| 分类号 | H01L27/15;H01L29/18;H01L33/00 | 主分类号 | H01L27/15 |
| 代理机构 | Blakely Sokoloff Taylor & Zafman LLP | 代理人 | Blakely Sokoloff Taylor & Zafman LLP |
| 主权项 | 1. A micro LED structure comprising: a micro p-n diode; a metallization layer; wherein the metallization layer is between the micro p-n diode and a bonding layer formed on a substrate; and a conformal barrier layer comprising a single layer of a same material that spans sidewalls of the micro p-n diode, sidewalls of the metallization layer, and sidewalls of the bonding layer. | ||
| 地址 | Santa Clara CA US | ||