Method of selective photo-enhanced wet oxidation for nitride layer regrowth on substrates and associated structure

摘要

Various embodiments of the present disclosure pertain to selective photo-enhanced wet oxidation for nitride layer regrowth on substrates. In one aspect, a method may comprise: forming a first III-nitride layer with a first low bandgap energy on a first surface of a substrate; forming a second III-nitride layer with a first high bandgap energy on the first III-nitride layer; transforming portions of the first III-nitride layer into a plurality of III-oxide stripes by photo-enhanced wet oxidation; forming a plurality of III-nitride nanowires with a second low bandgap energy on the second III-nitride layer between the III-oxide stripes; and selectively transforming at least some of the III-nitride nanowires into III-oxide nanowires by selective photo-enhanced oxidation.

主权项

1. A structure comprising:
a substrate structure; a first group III-nitride layer with a first low bandgap energy formed on a surface of the substrate; a second group III-nitride layer with a first high bandgap energy formed on the first group III-nitride layer; a plurality of group III-oxide stripes formed on the second group III-nitride layer; and a plurality of group III-oxide nanowires formed on the second group III-nitride layer between the group III-oxide stripes; wherein at least some of group III-nitride nanowires with a second low bandgap energy formed on the second group III-nitride layer between the group III-oxide stripes are selectively transformed into the group III-oxide nanowires by selective photo-enhanced oxidation; and wherein the first high bandgap energy is higher than the first low bandgap energy, and the first high bandgap energy is higher than the second low bandgap energy.