| 发明名称 | Cell array and memory device including the same | ||
| 摘要 | A memory cell array includes a plurality of normal word lines arranged at a first pitch, a plurality of repair word lines arranged at a second pitch, and a dummy boundary word line configured to be arranged between an outermost normal word line and an outermost repair word line. | ||
| 申请公布号 | US8811100(B2) | 申请公布日期 | 2014.08.19 |
| 申请号 | US201213716362 | 申请日期 | 2012.12.17 |
| 申请人 | SK Hynix Inc. | 发明人 | Ku Kie-Bong |
| 分类号 | G11C7/00;G11C11/4097;G11C7/18;G11C29/04;G11C29/02 | 主分类号 | G11C7/00 |
| 代理机构 | IP & T Group LLP | 代理人 | IP & T Group LLP |
| 主权项 | 1. A memory cell array comprising: a plurality of normal word lines arranged at a first pitch; a plurality of repair word lines arranged at a second pitch; and a dummy boundary word line arranged between an outermost normal word line and an outermost repair word line. | ||
| 地址 | Gyeonggi-do KR | ||