发明名称 Memory cells, methods of programming memory cells, and methods of forming memory cells
摘要 Some embodiments include methods of programming a memory cell. A plurality of charge carriers may be moved within the memory cell, with an average charge across the moving charge carriers having an absolute value greater than 2. Some embodiments include methods of forming and programming an ionic-transport-based memory cell. A stack is formed to have programmable material between first and second electrodes. The programmable material has mobile ions which are moved within the programmable material to transform the programmable material from one memory state to another. An average charge across the moving mobile ions has an absolute value greater than 2. Some embodiments include memory cells with programmable material between first and second electrodes. The programmable material includes an aluminum nitride first layer, and includes a second layer containing a mobile ion species in common with the first layer.
申请公布号 US8811063(B2) 申请公布日期 2014.08.19
申请号 US201313956242 申请日期 2013.07.31
申请人 Micron Technology, Inc. 发明人 Meade Roy E.;Srinivasan Bhaskar;Sandhu Gurtej S.
分类号 G11C11/21;G11C13/00;G11C13/02;G11C11/00 主分类号 G11C11/21
代理机构 Wells St. John P.S. 代理人 Wells St. John P.S.
主权项 1. A method of programming a memory cell comprising: moving a plurality of charge carriers within the memory cell; wherein an average charge across the plurality of charge carriers has an absolute value of greater than 2; wherein the memory cell comprises a pair of electrodes and comprises only a single programmable material between the electrodes; the programmable material being directly against each of the electrodes; the electrodes consisting of one or more of copper, titanium, platinum and tungsten; and wherein the entirety of the programmable material comprises an aluminum nitride matrix, wherein the charge carriers are species within the aluminum nitride matrix;and wherein the charge carriers include one or more of magnesium, silicon and oxygen.
地址 Boise ID US