发明名称 Seal ring structure with capacitor
摘要 A semiconductor device is disclosed. The semiconductor device includes a semiconductor substrate of a conductivity type having a chip region enclosed by a seal ring region. An insulating layer is on the semiconductor substrate. A seal ring structure is embedded in the insulating layer corresponding to the seal ring region. A capacitor is disposed under the seal ring structure and is electrically connected thereto, wherein the capacitor includes a body of the semiconductor substrate.
申请公布号 US8810001(B2) 申请公布日期 2014.08.19
申请号 US201213351151 申请日期 2012.01.16
申请人 Mediatek Inc. 发明人 Hung Cheng-Chou;Lee Tung-Hsing;Huang Yu-Hua;Yang Ming-Tzong
分类号 H01L21/02 主分类号 H01L21/02
代理机构 McClure, Qualey & Rodack, LLP 代理人 McClure, Qualey & Rodack, LLP
主权项 1. A semiconductor device, comprising: a semiconductor substrate of a first conductivity type having a chip region enclosed by a seal ring region; an insulating layer on the semiconductor substrate; a first seal ring structure embedded in the insulating layer corresponding to the seal ring region; and a first capacitor disposed under the first seal ring structure and electrically connected thereto, wherein the first capacitor comprises: a body of the semiconductor substrate; an isolation structure formed in the semiconductor substrate of the seal ring region; a first polysilicon layer interposed between the isolation structure and the first seal ring structure and enclosing the chip region; and at least one opening cutting the isolation structure and the first polysilicon layer off.
地址 Hsin-Chu TW