发明名称 |
Seal ring structure with capacitor |
摘要 |
A semiconductor device is disclosed. The semiconductor device includes a semiconductor substrate of a conductivity type having a chip region enclosed by a seal ring region. An insulating layer is on the semiconductor substrate. A seal ring structure is embedded in the insulating layer corresponding to the seal ring region. A capacitor is disposed under the seal ring structure and is electrically connected thereto, wherein the capacitor includes a body of the semiconductor substrate. |
申请公布号 |
US8810001(B2) |
申请公布日期 |
2014.08.19 |
申请号 |
US201213351151 |
申请日期 |
2012.01.16 |
申请人 |
Mediatek Inc. |
发明人 |
Hung Cheng-Chou;Lee Tung-Hsing;Huang Yu-Hua;Yang Ming-Tzong |
分类号 |
H01L21/02 |
主分类号 |
H01L21/02 |
代理机构 |
McClure, Qualey & Rodack, LLP |
代理人 |
McClure, Qualey & Rodack, LLP |
主权项 |
1. A semiconductor device, comprising:
a semiconductor substrate of a first conductivity type having a chip region enclosed by a seal ring region; an insulating layer on the semiconductor substrate; a first seal ring structure embedded in the insulating layer corresponding to the seal ring region; and a first capacitor disposed under the first seal ring structure and electrically connected thereto, wherein the first capacitor comprises: a body of the semiconductor substrate; an isolation structure formed in the semiconductor substrate of the seal ring region; a first polysilicon layer interposed between the isolation structure and the first seal ring structure and enclosing the chip region; and at least one opening cutting the isolation structure and the first polysilicon layer off. |
地址 |
Hsin-Chu TW |