发明名称 |
Semiconductor light emitting diode and method of producing the same |
摘要 |
A semiconductor light emitting diode including: a support substrate; an intermediate layer including an intermediate electrode portion, a second conductive semiconductor layer, an active layer, a first conductive semiconductor layer and an upper electrode portion sequentially disposed on the upper surface side of the support substrate in this order; and a lower electrode layer provided on the lower surface side of the support substrate, where: the intermediate layer has at least one intermediate electrode portion extending linearly or in an island-like shape; and the upper electrode portion and the intermediate electrode portion are disposed in such a positional relationship that these electrode portions are in parallel with and offset from each other and a distance between the upper electrode portion and the intermediate electrode portion is within the range of 10 μm to 50 μm. |
申请公布号 |
US8809894(B2) |
申请公布日期 |
2014.08.19 |
申请号 |
US201013148816 |
申请日期 |
2010.02.08 |
申请人 |
Dowa Electronics Materials Co., Ltd. |
发明人 |
Nakano Masayuki;Togawa Hiroyuki;Yamada Hidetaka |
分类号 |
H01L33/38;H01L33/30;H01L33/46;H01L33/40;H01L33/00 |
主分类号 |
H01L33/38 |
代理机构 |
Oliff PLC |
代理人 |
Oliff PLC |
主权项 |
1. A semiconductor light emitting diode comprising:
a support substrate; an intermediate layer including an intermediate electrode portion, a second conductive semiconductor layer, an active layer, a first conductive semiconductor layer and an upper electrode portion sequentially disposed on an upper surface side of the support substrate in this order; and a lower electrode layer provided on a lower surface side of the support substrate, wherein: the second conductive semiconductor layer, the active layer, and the first conductive semiconductor layer consist of an AlGaAs-based material or an AlGaInP-based material, and have a thickness of 1 μm to 10 μm, 10 nm to 500 nm, and 1 μm to 10 μm, respectively: the intermediate layer has at least one intermediate electrode portion extending linearly and in an island shape, the upper electrode portion is in a comb shape, and the upper electrode portion and the intermediate electrode portion are disposed in such a positional relationship that these electrode portions are in parallel with and offset from each other and a distance between the upper electrode portion and the intermediate electrode portion is within the range of 10 μm to 50 μm in a view obtained by projecting these electrode portions on an imaginary plane in parallel with the upper surface of the support substrate, respectively. |
地址 |
Tokyo JP |