Diode with heterojunction of nitride semiconductor layers

摘要

A diode includes: a semiconductor layer stack; cathode and anode electrodes formed on the semiconductor layer stack so as to be spaced apart from each other; and a protection film covering a region of an upper surface of the semiconductor layer stack. The semiconductor layer stack includes a first nitride semiconductor layer, and a second nitride semiconductor layer having a larger band gap than the first nitride semiconductor layer, and has a channel. The anode electrode includes: a p-type third nitride semiconductor layer formed on the semiconductor layer stack; a first metal layer being in ohmic contact with the third nitride semiconductor layer; and a second metal layer being in contact with the first metal layer, and being in ohmic contact with the channel.

主权项

1. A diode comprising:
a nitride semiconductor layer structure formed on a principal surface of a substrate, having a channel, and including an undoped nitride layer or an n-type nitride layer; and cathode and anode electrodes formed on the nitride semiconductor layer structure so as to be spaced apart from each other, wherein the anode electrode includes:
a p-type nitride semiconductor layer formed on the nitride semiconductor layer structure;a first metal layer formed on an upper surface of the p-type nitride semiconductor layer, and being in ohmic contact with the p-type nitride semiconductor layer;a second metal layer being in contact with the first metal layer, being opposite to the cathode electrode with respect to the p-type nitride semiconductor layer, and being in ohmic contact with the channel, andthe second metal layer being in direct contact with the channel.